mtc90 mta90 MTK90 mtx90 mt90 thyristor modules http://www.tech-sem.com page 1 of 3 value symbol characteristic test conditions t j ( c ) min type max unit i t(av) mean on-state current 180 half sine wave 50hz single side cooled, t c =85 c 125 90 a i t(rms) rms on-state current 125 141 a v drm v rrm repetitive peak off-state voltage repetitive peak reverse voltage v drm &v rrm tp=10ms v dsm &v rsm = v drm &v rrm +200v respectively 125 600 1600 v i drm i rrm repetitive peak current at v drm at v rrm 125 10 ma i tsm surge on-state current 2.00 ka i 2 t i 2 t for fusing coordination 10ms half sine wave v r =60%v rrm 125 20.4 a 2 s*10 3 v to threshold voltage 0.8 v r t on-state slop resistance 125 3.01 m ? v tm peak on-state voltage i tm =270a 25 1.70 v dv/dt critical rate of rise of off-state voltage v dm =67%v drm 125 800 v/ s di/dt critical rate of rise of on-state current i tm =180a, gate source 1.5a t r 0.5 s repetitive 125 100 a/ s i gt gate trigger current 30 100 ma v gt gate trigger voltage 1.0 2.5 v i h holding current v a =12v, i a =1a 25 20 100 ma v gd non-trigger gate voltage v dm =67%v drm 125 0.2 v r th(j-c) thermal resistance junction to case single side cooled 0.280 c /w rth(c-h) thermal resistance case to heat sink single side cooled 0.15 c /w v iso isolation voltage 50hz,r.m.s,t=1min,i iso :1ma(max) 2500 v thermal connection torque (m5) 4.0 n m f m mounting torque (m6) 6.0 n m t stg stored temperature -40 125 c w t weight 160 g outline 217f3/223f3 features n isolated mounting base 2500v~ n pressure contact technology with increased power cycling capability n space and weight savings typical applications n ac/dc motor drives n various rectifiers n dc supply for pwm inverter i t(av) 90a v drm /v rrm 600~1800v i tsm 2.0a 10 3 i 2 t 20.4a 2 s * 10 3 techsem
mtc90 mta90 MTK90 mtx90 mt90 http://www.tech-sem.com page 2 of 3 fig.5 fig.6 fig.1 fig.2 fig.3 fig.4 mtc90 0 40 80 120 160 200 240 0 20 40 60 80 100 120 mean on-state current,amperes max on-state dissipation,watts 30 60 90 120 180 max. power dissipation vs.mean on-state current conduction angle 180 0 mtc90 0 40 80 120 160 200 0 20 40 60 80 100 120 140 mean on-state current,amperes max on-state dissipation,watts 30 60 90 120 180 270 dc max. power dissipation vs.mean on-state current 360 conduction angle mtc90 0 20 40 60 80 100 120 140 0 306090120150180210240270 mean on-state current,amperes case temperature, c dc 270 180 120 90 60 30 max. case temperature vs.mean on-state current 360 conduction angle mtc90 0 20 40 60 80 100 120 140 0 30 60 90 120 150 180 mean on-state current,amperes case temperature, c 30 6090 120 180 max. case temperature vs.mean on-state current conduction angle 180 0 mtc90 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 10 100 1000 instantaneous on-state currant,amperes iinstantaneous on-state voltage,volts peak on-state voltage vs.peak on-state current t j =125 c 0.28 0 0.05 0.1 0.15 0.2 0.25 0.3 0.001 0.01 0.1 1 10 time,s transient thermal impedance, c/w max. junction to case thermai impedance vs.time techsem
mtc90 mta90 MTK90 mtx90 mt90 http://www.tech-sem.com page 3 of 3 outline: fig.7 fig.8 fig.9 fig.10 0 2 4 6 8 10 12 14 16 18 0 4 8 12 16 20 gate current,i gt a gate voltage,v gt v max. min. p gm =100w (100 s pulse) p g 2w gate characteristic at 25 c junction temperature 2.5v,100ma 0 0.5 1 1.5 2 2.5 3 3.5 4 0 30 60 90 120 150 180 gate current,i gt ma gate voltage,v gt v 125 c 25 c -10 c -30 c gate trigger zone at varies temperature 20 2 5 9 13 17 21 25 1 10 time,m.seconds maximum i 2 t(kamps 2 ,secs) i 2 t vs.time 2.0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 1 10 100 cycles at 50hz total peak half-sine surge current,ka surge current vs.cycles 3-m5 217f3 1 2 g1 k1 g2 3 k2 223f3 3 2 1 techsem
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